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Загальна кількість знайдених документів : 6
Представлено документи з 1 до 6
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Ilashchuk M. I. Influence of Cr doping on optical and photoluminescent properties of CdTe [Електронний ресурс] / M. I. Ilashchuk, O. A. Parfenyuk, K. S. Ulyanytskiy, V. V. Brus, N. D. Vakhnyak // Semiconductor physics, quantum electronics & optoelectronics. - 2010. - Vol. 13, № 1. - С. 91-94 . - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2010_13_1_20 Spectra of transmission and low-temperature photoluminescence of CdTe:Cr crystals have been investigated for concentrations of the doping impurity (Cr) from <$E1~cdot~10 sup 17> to <$E4~cdot~10 sup 19~roman cm sup -3> in the melt. We have found additional absorption bands with maxima at <$E lambda sub 1~symbol Ы~1,9~mu roman m> and <$E lambda sub 2~symbol Ы~7,0~mu roman m> induced by the presence of this dopant. An additional band of radiative recombination in the vicinity of 1,22 eV is caused by electron transitions from the conduction band to the deep donor levels <$E E sub v~+~(0,36~-~0,38)> eV, which correspond to the Cr<^>1+ defect entering to clusters. We have also observed the shift of CdTe:Cr absorption edge to the longwave region. This shift is caused by strong lattice deformation near the Cr<^>2+ impurity position due to the static Jahn-Teller effect.
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Brus V. V. Comparison of optical properties of TiO2 thin films prepared by reactive magnetron sputtering and electron-beam evaporation techniques [Електронний ресурс] / V. V. Brus, Z. D. Kovalyuk, O. A. Parfenyuk, N. D. Vakhnyak // Semiconductor physics, quantum electronics & optoelectronics. - 2011. - Vol. 14, № 4. - С. 427-431. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2011_14_4_11 The envelope method was used to determine optical constants of TiO2 thin films deposited by DC reactive magnetron sputtering and electron-beam evaporation techniques. The density and thickness of the thin films were calculated. Optical properties of the TiO2 thin films were strongly dependent on the deposition technology. The TiO2 thin films prepared by magnetron sputtering and electron-beam evaporation methods were established to be indirect band semiconductors with the band gap energies 3,15 and 3,43 eV, respectively.
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Brus V. V. Photoelectrical analysis of n-TiO2/p-CdTe heterojunction solar cells [Електронний ресурс] / V. V. Brus, P. D. Maryanchuk, O. A. Parfenyuk, N. D. Vakhnyak // Semiconductor physics, quantum electronics & optoelectronics. - 2013. - Vol. 16, № 1. - С. 37-42. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2013_16_1_6
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Makhniy V. P. Influence of ytterbium impurity on luminescent properties of ZnSe/Al/ crystals [Електронний ресурс] / V. P. Makhniy, N. D. Vakhnyak, O. V. Kinzerska, I. M. Senko // Semiconductor physics, quantum electronics & optoelectronics. - 2016. - Vol. 19, № 4. - С. 391-394. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2016_19_4_13 The influence of Yb impurity on evolution of luminescent properties of zinc selenide crystals doped with Al in the growth process is discussed. It was ascertained that diffusion of Yb impurity in a closed volume from vapor phase of ZnSe<> substrates causes "quenching" the yellow-green band and appearance of intensive blue luminescent band that has exciton nature.
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Vakhnyak N. D. Transformation of impurity-defect centers in single crystals CdTe: Cl under the influence of microwaves [Електронний ресурс] / N. D. Vakhnyak, O. P. Lotsko, S. I. Budzulyak, L. A. Demchyna, D. V. Korbutyak, R. V. Konakova, R. A. Red’ko, O. B. Okhrimenko, N. I. Berezovska // Semiconductor physics, quantum electronics & optoelectronics. - 2017. - Vol. 20, № 2. - С. 250-253. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2017_20_2_20 Performed in this work are the researches of the influence of microwave irradiation (2,45 GHz, 24 GHz) on spectra of low-temperature (T = 2 K) photoluminescence (PL) in single crystals CdTe:Cl. Transformation of impurity-defect centers in CdTe:Cl responsible for PL within the spectral range 1,3 to 1,5 eV under microwave irradiation was analyzed. The parameter of electron-phonon interaction (Huang-Rhys factor) for the donor-acceptor PL band, which depends on the time of microwave irradiation, has been calculated.
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Makhniy V. P. Luminescence of crystals ZnSe :Gd [Електронний ресурс] / V. P. Makhniy, N. D. Vakhnyak, O. V. Kinzerska, I. M. Senko // Semiconductor physics, quantum electronics & optoelectronics. - 2018. - Vol. 21, № 1. - С. 80-82. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2018_21_1_11 It has been experimentally shown that the luminescence spectra of ZnSe <$Esymbol ... roman Al symbol ъ> crystals doped with Gd from the vapor phase contain two mutually compatible luminescence bands. It is established that the low-energy G-band is due to recombination with association of complexes (<$Eroman V sub Zn symbol Т roman Al sub Zn sup symbol Ч>) and (<$Eroman V sub Zn symbol Т roman V sub Sc sup symbol Ч>), and the boundary B-band is the result of annihilation of excitons and interband transitions.
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